ELE 547B na, npdf
Selected Topics in Solid-State Electronics - Electronic Properties of Doped Semiconductors
Course covers impurity states and impurity band formation in doped semiconductors. The evolution of optical, dielectric, transport, magnetic and thermodynamic properties as a function of dopant concentration, from the insulating regime at low doping, through the metal insulator transition, to the metallic phase, are studied. Topics include hopping transport, band tails, Coulomb gap, weak localization and the scaling theory of the localization transition.
Sample reading list:
B. I. Shklovskii & A. L. Efros, Electronic Properties of Doped Semiconductors
N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials
N. F. Mott, Metal-Insulator Transitions
Reading list will include a selection of journal articles
Other Exam - 50%
Term Paper(s) - 25%
Problem set(s) - 25%
Open to Graduate Students Only.
Prerequisites and Restrictions:
Solid State Physics at the level of ELE441 or PHY525, or permission of instructor..
|25564||L01||9:30 am - 10:50 am||M W F||Engineering Quad B-Wing B418||Enrolled:3 Limit:15|